NEW FIELD-EFFECT RESONANT TUNNELING TRANSISTOR - OBSERVATION OF OSCILLATORY TRANSCONDUCTANCE

被引：14
|
作者：
YANG, CH [1 ]
KAO, YC [1 ]
SHIH, HD [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75243
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期
关键词：
D O I：
10.1063/1.101940
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2742 / 2744
页数：3
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