COUPLED-QUANTUM-WELL FIELD-EFFECT RESONANT-TUNNELING TRANSISTOR FOR MULTIVALUED LOGIC MEMORY APPLICATIONS

被引：6

作者：

MIKKELSON, CH

SEABAUGH, AC

BEAM, EA

LUSCOMBE, JH

FRAZIER, GA

机构：

[1] Texas Instruments Inc, Dallas, TX

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 02期

关键词：

D O I：

10.1109/16.277388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination or the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions.

引用

页码：132 / 137

页数：6

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