DC CURRENT-VOLTAGE CHARACTERISTICS OF A DOUBLE-QUANTUM-WELL FIELD-EFFECT RESONANT TUNNELING TRANSISTOR

被引：3

作者：

CHEN, JG ^{[1
]}

YANG, CH ^{[1
]}

WILSON, RA ^{[1
]}

WOOD, CEC ^{[1
]}

机构：

[1] LAB PHYS SCI,COLLEGE PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We reported the observation of steplike drain current and the negative transconductance, in a field-effect transistor. Our transistor has a double-quantum-well channel, and the quantum well close to the surface is depleted. We demonstrate that the novel transistor characteristics are from tunneling of electrons in between two-dimensional quantum wells. The observed current-voltage characteristic in gate tunneling current has a large peak-to-valley ratio (380-1), which is close to an idealized delta functionlike behavior.

引用

页码：2273 / 2275

页数：3

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