共 50 条
- [42] Epitaxial Si surface for GaAs heteroepitaxy Journal of Crystal Growth, 1994, 143 (3-4): : 349 - 353
- [44] DISLOCATION GENERATION AND ELIMINATION IN GAAS ON SI EVALUATION OF ADVANCED SEMICONDUCTOR MATERIALS BY ELECTRON MICROSCOPY, 1989, 203 : 335 - 346
- [45] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) AND GE(100) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 552 - 553
- [48] Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization ACS APPLIED ENERGY MATERIALS, 2018, 1 (05): : 1893 - 1897