Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization

被引：4

作者：

Liu, Ziheng ^{[1
]}

Hao, Xiaojing ^{[1
]}

Huang, Jialiang ^{[1
]}

Ho-Baillie, Anita ^{[1
]}

Green, Martin A. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

ACS APPLIED ENERGY MATERIALS | 2018年 / 1卷 / 05期

基金：

澳大利亚研究理事会;

关键词：

epitaxial Ge films; defect reduction; continuous-wave diode laser; recrystallization; magnetron sputtering; PHASE EPITAXY; SILICON; SI; GE; EVOLUTION; GROWTH; GLASS; GAAS;

D O I：

10.1021/acsaem.7b00130

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III-V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD.

引用

页码：1893 / 1897

页数：9

共 13 条

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JOURNAL OF CRYSTAL GROWTH, 2025, 649

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