Periodic dimple lines on the surface of the grain-boundary free (100) Si thin films grown by the continuous-wave laser crystallization

Periodic dimple lines have been found by the atomic-force-microscopy on the surface of the grain-boundary free (100) Si films obtained by the continuous-wave laser crystallization. The dimple lines are straight and run parallel each other to the scan direction regularly at a period of -3.1 mu m. The depth of the dimple lines is 3-5 nm (peak-to-valley). The internal angle of the dimple lines is -179.4 degrees. These dimple lines originate from hyperfine sub-boundaries with a boundary energy of 2.4 x 10-6 J/cm2, a rotation angle theta of -0.061 degrees, and a dislocation spacing of -0.36 mu m.