Periodic dimple lines on the surface of the grain-boundary free (100) Si thin films grown by the continuous-wave laser crystallization

被引：0

作者：

Takayama, Satoshi ^{[1
]}

Sasaki, Nobuo ^{[1
,2
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Ikoma, Nara 6300192, Japan

[2] Sasaki Consulting, Nakasaiwaicho,Saiwaiku, Kawasaki 2120012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2025年 / 649卷

关键词：

CLC; Grain-boundary; Sub-boundary; Hyperfine sub-boundary; AFM; EBSD;

D O I：

10.1016/j.jcrysgro.2024.127934

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Periodic dimple lines have been found by the atomic-force-microscopy on the surface of the grain-boundary free (100) Si films obtained by the continuous-wave laser crystallization. The dimple lines are straight and run parallel each other to the scan direction regularly at a period of -3.1 mu m. The depth of the dimple lines is 3-5 nm (peak-to-valley). The internal angle of the dimple lines is -179.4 degrees. These dimple lines originate from hyperfine sub-boundaries with a boundary energy of 2.4 x 10-6 J/cm2, a rotation angle theta of -0.061 degrees, and a dislocation spacing of -0.36 mu m.

引用

页数：6