DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)

被引：158

作者：

FISCHER, R ^{[1
]}

NEUMAN, D ^{[1
]}

ZABEL, H ^{[1
]}

MORKOC, H ^{[1
]}

CHOI, C ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 18期

关键词：

D O I：

10.1063/1.96988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1223 / 1225

页数：3

共 50 条

[31] ROLE OF STRAINED LAYER SUPERLATTICES IN MISFIT DISLOCATION REDUCTION IN GROWTH OF EPITAXIAL GE0.5 SI0.5 ALLOYS ON SI(100) SUBSTRATES
HULL, R
BEAN, JC
LEIBENGUTH, RE
WERDER, DJ
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4723 - 4729
[32] LOW-TEMPERATURE SUBSTRATE ANNEALING OF VICINAL SI(100) FOR EPITAXIAL-GROWTH OF GAAS ON SI
OKADA, Y
SHIMOMURA, H
SUGAYA, T
KAWABE, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3774 - 3776
[33] DISLOCATION REDUCTION IN GAAS WAFERS
MOONEY, JB
RIGGS, ML
SHER, A
GIBBONS, JF
SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 61 - 64
[34] Dislocation reduction of GaAs and AlGaAs on Si substrate for high efficiency solar cell
Soga, T
Yang, M
Kato, T
Jimbo, T
Umeno, M
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1779 - 1783
[35] Dislocation density reduction in GaAs epilayers on Si using strained layer superlattices
Sharan, S.
Narayan, J.
Journal of Electronic Materials, 1991, 20 (07) : 779 - 784
[36] DISLOCATION DENSITY REDUCTION IN GAAS EPILAYERS ON SI USING STRAINED LAYER SUPERLATTICES
SHARAN, S
NARAYAN, J
FAN, JCC
JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (10) : 779 - 784
[37] FILM THICKNESS DEPENDENCE OF DISLOCATION DENSITY REDUCTION IN GAAS-ON-SI SUBSTRATES
TACHIKAWA, M
YAMAGUCHI, M
APPLIED PHYSICS LETTERS, 1990, 56 (05) : 484 - 486
[38] Molecular beam epitaxial growth of GaAs on Si(100). A variable growth temperature study
Woolf, D.A., 1600,
[39] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY
TAKASUGI, H
KAWABE, M
BANDO, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L584 - L586
[40] Raman monitoring of molecular beam epitaxial growth of GaN on GaAs (100) and Si (111)
Drews, D
Schneider, A
Zahn, DRT
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1128 - 1132

← 1 2 3 4 5 →