A 256K CMOS SRAM WITH VARIABLE IMPEDANCE DATA-LINE LOADS

被引：10
|
作者：
YAMAMOTO, S
TANIMURA, N
NAGASAWA, K
MEGURO, S
YASUI, T
MINATO, O
MASUHARA, T
机构：
[1] Hitachi Ltd, Tokyo, Jpn, Hitachi Ltd, Tokyo, Jpn
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 05期
关键词：
D O I：
10.1109/JSSC.1985.1052416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5
引用
收藏
页码：924 / 928
页数：5
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