A 256K CMOS SRAM WITH VARIABLE IMPEDANCE DATA-LINE LOADS

被引：10
|
作者：
YAMAMOTO, S
TANIMURA, N
NAGASAWA, K
MEGURO, S
YASUI, T
MINATO, O
MASUHARA, T
机构：
[1] Hitachi Ltd, Tokyo, Jpn, Hitachi Ltd, Tokyo, Jpn
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 05期
关键词：
D O I：
10.1109/JSSC.1985.1052416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5
引用
收藏
页码：924 / 928
页数：5
相关论文
共 39 条
  • [11] A 95NS 256K CMOS EPROM
    YOSHIZAKI, K
    TAKAHASHI, H
    KAMIGAKI, Y
    YASUI, T
    KOMORI, K
    KATTO, H
    ISSCC DIGEST OF TECHNICAL PAPERS, 1985, 28 : 166 - 167
  • [12] A 100NS 256K CMOS EPROM
    GAW, H
    HOKELEK, E
    HOLLER, M
    LEE, S
    OLSON, L
    REITSMA, M
    SO, H
    TAM, K
    VANBUSKIRK, M
    IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE, 1985, 28 : 164 - 165
  • [13] A 46NS 256K CMOS RAM
    ISOBE, M
    MATSUNAGA, J
    SAKURAI, T
    OHTANI, T
    SAWADA, K
    NOZAWA, H
    IIZUKA, T
    KOHYAMA, S
    ISSCC DIGEST OF TECHNICAL PAPERS, 1984, 27 : 214 - &
  • [14] 256K CMOS ROM HAS NMOS PRICE
    HO, C
    ELECTRONIC PRODUCTS MAGAZINE, 1982, 25 (01): : 25 - 26
  • [15] A 50-NS CMOS 256K EEPROM
    TING, TKJ
    CHANG, T
    LIN, T
    JENQ, CS
    NAIFF, KLC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) : 1164 - 1170
  • [16] THE DESIGN AND PERFORMANCE OF CMOS 256K BIT DRAM DEVICES
    MOHSEN, A
    KUNG, RI
    SIMONSEN, CJ
    SCHUTZ, J
    MADLAND, PD
    HAMDY, EZ
    BOHR, MT
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (05) : 610 - 618
  • [17] A PROGRAMMABLE 256K CMOS EPROM WITH ON-CHIP TEST CIRCUITS
    TANAKA, S
    ATSUMI, S
    MOMODOMI, M
    SHINADA, K
    YOSHIKAWA, K
    NAGAKUBO, Y
    KANZAKI, K
    ISSCC DIGEST OF TECHNICAL PAPERS, 1984, 27 : 148 - 149
  • [18] A 45-NS 256K CMOS STATIC RAM WITH A TRI-LEVEL WORD LINE
    SHINOHARA, H
    ANAMI, K
    ICHINOSE, K
    WADA, T
    KOHNO, Y
    KAWAI, Y
    AKASAKA, Y
    KAYANO, S
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (05) : 929 - 934
  • [19] A 50-NS 256K CMOS SPLIT-GATE EPROM
    ALI, SB
    SANI, B
    SHUBAT, AS
    SINAI, K
    KAZEROUNIAN, R
    HU, CJ
    MA, YY
    EITAN, B
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (01) : 79 - 85
  • [20] A 70 NS 256K DRAM WITH BIT-LINE SHIELD
    MASHIKO, K
    KOBAYASHI, T
    MIYAMOTO, H
    ARIMOTO, K
    MOROOKA, Y
    HATANAKA, M
    YAMADA, M
    NAKANO, T
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1984, 19 (05) : 591 - 596
1234