EPITAXIAL-GROWTH OF FESI2 IN FE THIN-FILMS ON SI WITH A THIN INTERPOSING NI LAYER

被引：23
|
作者：
CHENG, HC [1 ]
YEW, TR [1 ]
CHEN, LJ [1 ]
机构：
[1] NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期
关键词：
D O I：
10.1063/1.96237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：128 / 130
页数：3
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