Controllable growth of α- and β-FeSi2 thin films on SI(100) by facing-target sputtering

被引：8
|
作者：
Pan, S. S. [1 ]
Ye, C. [1 ]
Teng, X. M. [1 ]
Fan, H. T. [1 ]
Li, G. H. [1 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 10期
关键词：
D O I：
10.1002/pssa.200622438
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-phase beta- and alpha-FeSi2 thin films can be grown on Si(100) with and without a thin Fe buffer layer by adopting a facing target radio-frequency magnetron sputtering method. The role of the buffer layer on the formation of beta- and alpha-FeSi2 thin film was discussed. The composition of 0-FeS'2 thin film can be tuned from Fe enrichment to Si enrichment by altering the radio-frequency input power applied on the Si or/and Fe target, and the beta-FeSi2 thin film has a high (202)/(220) orientation. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：3316 / 3320
页数：5
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