Controllable growth of α- and β-FeSi2 thin films on SI(100) by facing-target sputtering

被引：8

作者：

Pan, S. S. ^{[1
]}

Ye, C. ^{[1
]}

Teng, X. M. ^{[1
]}

Fan, H. T. ^{[1
]}

Li, G. H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 10期

关键词：

D O I：

10.1002/pssa.200622438

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-phase beta- and alpha-FeSi2 thin films can be grown on Si(100) with and without a thin Fe buffer layer by adopting a facing target radio-frequency magnetron sputtering method. The role of the buffer layer on the formation of beta- and alpha-FeSi2 thin film was discussed. The composition of 0-FeS'2 thin film can be tuned from Fe enrichment to Si enrichment by altering the radio-frequency input power applied on the Si or/and Fe target, and the beta-FeSi2 thin film has a high (202)/(220) orientation. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

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页码：3316 / 3320

页数：5

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