Controllable growth of α- and β-FeSi2 thin films on SI(100) by facing-target sputtering

被引：8
|
作者：
Pan, S. S. [1 ]
Ye, C. [1 ]
Teng, X. M. [1 ]
Fan, H. T. [1 ]
Li, G. H. [1 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 10期
关键词：
D O I：
10.1002/pssa.200622438
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-phase beta- and alpha-FeSi2 thin films can be grown on Si(100) with and without a thin Fe buffer layer by adopting a facing target radio-frequency magnetron sputtering method. The role of the buffer layer on the formation of beta- and alpha-FeSi2 thin film was discussed. The composition of 0-FeS'2 thin film can be tuned from Fe enrichment to Si enrichment by altering the radio-frequency input power applied on the Si or/and Fe target, and the beta-FeSi2 thin film has a high (202)/(220) orientation. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
下载
收藏
页码：3316 / 3320
页数：5
相关论文
共 50 条
  • [31] MAGNETIC-ANISOTROPY AND SOFT MAGNETISM OF IRON NITRIDE THIN-FILMS PREPARED BY FACING-TARGET SPUTTERING
    MORISAKO, A
    MATSUMOTO, M
    NAOE, M
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) : 5619 - 5621
  • [32] High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target
    Xu, S. C.
    Yang, C.
    Liu, M.
    Jiang, S. Z.
    Ma, Y. Y.
    Chen, C. S.
    Gao, X. G.
    Sun, Z. C.
    Hu, B.
    Wang, C. C.
    Man, B. Y.
    MATERIALS CHEMISTRY AND PHYSICS, 2012, 135 (2-3) : 991 - 997
  • [33] Growth of β-FeSi2 thin films on silicon (100) substrate for different annealing times by pulsed laser deposition
    Xu, S. C.
    Gao, S. B.
    Man, B. Y.
    Yang, C.
    Liu, M.
    Ma, Y. Y.
    Jiang, S. Z.
    Chen, C. S.
    Liu, A. H.
    Gao, X. G.
    Sun, Z. C.
    Hu, B.
    Wang, C. C.
    VACUUM, 2012, 86 (07) : 1007 - 1011
  • [34] Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP heterojunction prepared by RF-sputtering deposition
    Okajima, K
    Wen, CJ
    Ihara, M
    Sakata, I
    Yamada, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2A): : 781 - 786
  • [35] ALLOTAXIAL GROWTH OF EPITAXIAL SI/FESI2,/SI HETEROSTRUCTURES
    MULLER, O
    MANTL, S
    RADERMACHER, K
    BAY, HL
    CRECELIUS, G
    DIEKER, C
    MESTERS, S
    APPLIED SURFACE SCIENCE, 1993, 73 : 141 - 145
  • [36] Microstructure of amorphous carbon nitride films fabricated by facing-target reactive magnetron sputtering
    Wang, XC
    Wu, P
    Li, ZQ
    Jiang, EY
    Bai, HL
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (15) : 2127 - 2134
  • [37] Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement
    Tatsuhiko Taniguchi
    Shunya Sakane
    Shunsuke Aoki
    Ryo Okuhata
    Takafumi Ishibe
    Kentaro Watanabe
    Takeyuki Suzuki
    Takeshi Fujita
    Kentarou Sawano
    Yoshiaki Nakamura
    Journal of Electronic Materials, 2017, 46 : 3235 - 3241
  • [38] Growth and characterization of β-FeSi2 thin films prepared by laser ablation method
    Kakemoto, H
    Makita, Y
    Sakuragi, S
    Show, Y
    Izumi, T
    Sakata, I
    Obara, A
    Kobayashi, N
    Ando, S
    Tsukamoto, T
    LASER PROCESSING OF MATERIALS AND INDUSTRIAL APPLICATIONS II, 1998, 3550 : 129 - 140
  • [39] Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement
    Taniguchi, Tatsuhiko
    Sakane, Shunya
    Aoki, Shunsuke
    Okuhata, Ryo
    Ishibe, Takafumi
    Watanabe, Kentaro
    Suzuki, Takeyuki
    Fujita, Takeshi
    Sawano, Kentarou
    Nakamura, Yoshiaki
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (05) : 3235 - 3241
  • [40] Optical and photoelectrical properties of β-FeSi2 thin films
    Shen, W.Z., 1600, American Inst of Physics, Woodbury, NY, United States (78):
12345