EPITAXIAL-GROWTH OF PROX THIN-FILMS ON SAPPHIRE BY PULSED LASER DEPOSITION

被引：3
|
作者：
LING, SH [1 ]
AU, WS [1 ]
TANG, YS [1 ]
WONG, HK [1 ]
机构：
[1] CHINESE UNIV HONG KONG,DEPT PHYS,SHA TIN,HONG KONG
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 10期
关键词：
D O I：
10.1063/1.352019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
PrO(x) thin films have been grown epitaxially on r-plane sapphire by pulsed laser deposition. The films have (100) orientation if grown at 800-degrees-C, and twinned (111) at lower substrate temperatures. The lattice constant of the PrO(x) film can be varied by thermal treatment at different oxygen partial pressures. a axis-oriented YBa2Cu3O7-delta films have been grown epitaxially on (100) Pr6O11 layers.
引用
收藏
页码：4981 / 4983
页数：3
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