EPITAXIAL-GROWTH OF CAF2 THIN-FILMS ON (100) GAAS BY PULSED-LASER DEPOSITION AND INSITU ANNEALING

被引：7
|
作者：
SHUSHTARIAN, SS [1 ]
OGALE, SB [1 ]
CHAUDHARI, GN [1 ]
SINGH, P [1 ]
RAO, VJ [1 ]
机构：
[1] NATL CHEM LAB,DIV PHYS & STRUCT CHEM,POONA 411008,MAHARASHTRA,INDIA
来源：
MATERIALS LETTERS | 1991年 / 12卷 / 05期
关键词：
D O I：
10.1016/0167-577X(91)90112-J
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial thin films of CaF2 have been grown on (100) GaAs substrates by pulsed-laser deposition followed by in-situ rapid annealing. These single-crystalline films exhibit good quality as evidenced by X-ray diffraction and transmission electron microscopy. Metal-insulator-semiconductor configurations fabricated from these layers exhibit near-ideal capacitance-voltage curves without hysteresis from accumulation to inversion.
引用
收藏
页码：335 / 338
页数：4
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