ITERATIVE METHODS IN SEMICONDUCTOR-DEVICE SIMULATION

被引:21
|
作者
RAFFERTY, CS
PINTO, MR
DUTTON, RW
机构
关键词
D O I
10.1109/TCAD.1985.1270144
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:462 / 471
页数:10
相关论文
共 50 条
  • [1] ITERATIVE METHODS IN SEMICONDUCTOR-DEVICE SIMULATION
    RAFFERTY, CS
    PINTO, MR
    DUTTON, RW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2018 - 2027
  • [2] ITERATIVE METHODS IN SEMICONDUCTOR-DEVICE SIMULATION
    BANK, RE
    COUGHRAN, WM
    DRISCOLL, MA
    SMITH, RK
    FICHTNER, W
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 1989, 53 (1-3) : 201 - 212
  • [3] CONTINUATION METHODS IN SEMICONDUCTOR-DEVICE SIMULATION
    COUGHRAN, WM
    PINTO, MR
    SMITH, RK
    [J]. JOURNAL OF COMPUTATIONAL AND APPLIED MATHEMATICS, 1989, 26 (1-2) : 47 - 65
  • [4] SEMICONDUCTOR-DEVICE SIMULATION
    FICHTNER, W
    ROSE, DJ
    BANK, RE
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1018 - 1030
  • [5] SEMICONDUCTOR-DEVICE SIMULATION
    GUSTAFSON, K
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 1991, 65 (1-3) : 133 - 136
  • [6] SEMICONDUCTOR-DEVICE SIMULATION
    FICHTNER, W
    ROSE, DJ
    BANK, RE
    [J]. SIAM JOURNAL ON SCIENTIFIC AND STATISTICAL COMPUTING, 1983, 4 (03): : 391 - 415
  • [7] SEMICONDUCTOR-DEVICE SIMULATION
    LEE, CM
    LOMAX, RJ
    HADDAD, GI
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, TT22 (03) : 160 - 177
  • [8] FINITE-ELEMENT METHODS IN SEMICONDUCTOR-DEVICE SIMULATION
    BARNES, JJ
    LOMAX, RJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) : 1082 - 1089
  • [9] SEMICONDUCTOR-DEVICE SIMULATION AT NTT
    YOKOYAMA, K
    TOMIZAWA, M
    YOSHII, A
    SUDO, T
    [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) : 452 - 461
  • [10] SEMICONDUCTOR-DEVICE SIMULATION AT NTT
    YOKOYAMA, K
    TOMIZAWA, M
    YOSHII, A
    SUDO, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2008 - 2017