SEMICONDUCTOR-DEVICE SIMULATION AT NTT

被引：1

作者：

YOKOYAMA, K ^{[1
]}

TOMIZAWA, M ^{[1
]}

YOSHII, A ^{[1
]}

SUDO, T ^{[1
]}

机构：

[1] UNIV ILLINOIS, URBANA, IL 61801 USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1985年 / 4卷 / 04期

关键词：

D O I：

10.1109/TCAD.1985.1270143

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：452 / 461

页数：10

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