SEMICONDUCTOR-DEVICE SIMULATION AT NTT

被引：16

作者：

YOKOYAMA, K ^{[1
]}

TOMIZAWA, M ^{[1
]}

YOSHII, A ^{[1
]}

SUDO, T ^{[1
]}

机构：

[1] UNIV ILLINOIS, URBANA, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1109/T-ED.1985.22233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2008 / 2017

页数：10

共 50 条

[1] SEMICONDUCTOR-DEVICE SIMULATION AT NTT
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[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) : 452 - 461
[2] SEMICONDUCTOR-DEVICE SIMULATION
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1018 - 1030
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[7] CONTINUATION METHODS IN SEMICONDUCTOR-DEVICE SIMULATION
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[9] INVARIANT IMBEDDING IN SEMICONDUCTOR-DEVICE SIMULATION
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[10] ITERATIVE METHODS IN SEMICONDUCTOR-DEVICE SIMULATION
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