FINITE-ELEMENT METHODS IN SEMICONDUCTOR-DEVICE SIMULATION

被引：49

作者：

BARNES, JJ

LOMAX, RJ

机构：

[1] AMER MICROSYST INC,SANTA CLARA,CA 95051

[2] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTRON PHYS LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1109/T-ED.1977.18880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1082 / 1089

页数：8

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