MODERN BOLOMETERS, DETECTORS BASED ON P-N-JUNCTIONS, AND DETECTORS BASED ON THE THERMOELASTIC EFFECT IN CRYSTALLINE QUARTZ

被引:0
|
作者
PANKRATOV, NA
机构
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper discusses the results of work on thermal radiation detectors: metallic and semiconductor bolometers, detectors based on p-n junctions, and detectors based on the thermoelastic effect in crystalline quartz. Characteristics of the detectors and of measuring devices based on them are given.
引用
收藏
页码:300 / 307
页数:8
相关论文
共 50 条
  • [31] Terahertz Direct Detectors Based on Superconducting Hot Electron Bolometers with Microwave Biasing
    Jiang, Shou-Lu
    Li, Xian-Feng
    Su, Run-Feng
    Jia, Xiao-Qing
    Tu, Xue-Cou
    Kang, Lin
    Jin, Biao-Bing
    Xu, Wei-Wei
    Chen, Jian
    Wu, Pei-Heng
    CHINESE PHYSICS LETTERS, 2017, 34 (09)
  • [32] Terahertz Direct Detectors Based on Superconducting Hot Electron Bolometers with Microwave Biasing
    姜寿禄
    李先峰
    苏润丰
    贾小氢
    涂学凑
    康琳
    金飚兵
    许伟伟
    陈健
    吴培亨
    Chinese Physics Letters, 2017, 34 (09) : 43 - 46
  • [33] Efficient Broadband Terahertz Radiation Detectors Based on Bolometers with a Thin Metal Absorber
    M. A. Dem’yanenko
    Technical Physics, 2018, 63 : 120 - 125
  • [34] Models for Plasmonic THz Detectors Based on Graphene Split-Gate FETs with Lateral p-n Junctions
    Ryzhii, Maxim
    Ryzhii, Victor
    Satou, Akira
    Otsuji, Taiichi
    Mitin, Vladimir
    Shur, Michael S.
    2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2016, : 361 - 364
  • [35] Infrared detectors based on semiconductor p-n junction of PbSe
    Kasiyan, Vladimir
    Dashevsky, Zinovi
    Schwarz, Casey Minna
    Shatkhin, M.
    Flitsiyan, Elena
    Chernyak, Leonid
    Khokhlov, Dmitry
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
  • [36] IMPURITY PHOTO-ELECTRIC EFFECT IN GERMANIUM P-N-JUNCTIONS
    KURBATOV, VA
    PENIN, NA
    SOLOVEV, NN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1102 - 1104
  • [37] PHOTOVOLTAIC EFFECT IN ZN-DIFFUSED GAP P-N-JUNCTIONS
    SONOMURA, H
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (11): : 134 - +
  • [38] Combined detectors based on crystalline p-terphenyl for detection of UV-radiation
    Andrushenko, L
    Baker, J
    Budakovsky, S
    Galunov, N
    Titar, V
    Yermolenko, I
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2001, 361 : 293 - 298
  • [39] ROOM TEMPERATURE OPERATED P-N JUNCTIONS AS CHARGED PARTICLE DETECTORS
    FRIEDLAND, SS
    MAYER, JW
    DENNEY, JM
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1960, 31 (01): : 74 - 75
  • [40] The distribution of an electric field in p-n junctions of silicon edgeless detectors
    V. K. Eremin
    A. S. Naletko
    E. M. Verbitskaya
    I. V. Eremin
    N. N. Egorov
    Semiconductors, 2011, 45 : 1234 - 1241