ROOM TEMPERATURE OPERATED P-N JUNCTIONS AS CHARGED PARTICLE DETECTORS

被引:5
|
作者
FRIEDLAND, SS
MAYER, JW
DENNEY, JM
机构
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 1960年 / 31卷 / 01期
关键词
D O I
10.1063/1.1716807
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:74 / 75
页数:2
相关论文
共 50 条
  • [1] Creation of p-n junctions and ohmic contacts by solid phase epitaxy on high resistivity silicon for charged particle detectors
    Lefterov, DP
    Moravska, EY
    Panteleev-Simeonova, L
    Mikhailov, MA
    MEASUREMENT SCIENCE AND TECHNOLOGY, 2005, 16 (10) : N38 - N41
  • [2] SOME PROPERTIES OF GAAS LASERS WITH EPITAXIAL P-N JUNCTIONS AT ROOM TEMPERATURE
    KOGAN, LM
    LIBOV, LD
    NASLEDOV, DN
    NIKITINA, TF
    STRAKHOV.GM
    TSARENKO.BV
    SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (09): : 2227 - &
  • [3] Linearization of P-N junctions by the same P-N junctions
    Bruck, YM
    27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248
  • [4] MICROPLASMAS IN SILICON P-N JUNCTIONS AS DETECTORS FOR GAMMA RADIATION
    RUGE, I
    KEIL, G
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (04): : 390 - &
  • [5] P-N JUNCTIONS - A TOOL FOR TEMPERATURE MEASUREMENT
    ENFIELD, CG
    WATER RESOURCES RESEARCH, 1970, 6 (03) : 981 - &
  • [6] The distribution of an electric field in p-n junctions of silicon edgeless detectors
    V. K. Eremin
    A. S. Naletko
    E. M. Verbitskaya
    I. V. Eremin
    N. N. Egorov
    Semiconductors, 2011, 45 : 1234 - 1241
  • [7] The Distribution of an Electric Field in p-n Junctions of Silicon Edgeless Detectors
    Eremin, V. K.
    Naletko, A. S.
    Verbitskaya, E. M.
    Eremin, I. V.
    Egorov, N. N.
    SEMICONDUCTORS, 2011, 45 (09) : 1234 - 1241
  • [8] APPLICATION OF SEMICONDUCTOR DETECTORS WITH P-N JUNCTIONS IN NUCLEAR INSTRUMENT MAKING
    MATVEEV, VV
    SELDYAKO.YP
    SOKOLOV, AD
    MEASUREMENT TECHNIQUES-USSR, 1967, (10): : 1244 - &
  • [9] THE TEMPERATURE DEPENDENCE OF THE TUNNEL CURRENT IN P-N JUNCTIONS
    VUL, BM
    SHOTOV, AP
    GRISHECHKINA, SP
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (02): : 489 - 491
  • [10] SILICON P-N JUNCTIONS AS LOW TEMPERATURE THERMOMETERS
    UNSWORTH, J
    ROSEINNE.AC
    CRYOGENICS, 1966, 6 (04) : 239 - &