共 50 条
- [21] PHOTOCAPACITANCE EFFECT IN REVERSE-BIASED P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 54 - 57
- [22] EFFECT OF DU/DT ON AVALANCHE BREAKDOWN OF P-N-JUNCTIONS SOVIET MICROELECTRONICS, 1989, 18 (01): : 38 - 43
- [23] PUNCH EFFECT OF P-N-JUNCTIONS IN THE SEMICONDUCTOR TETRODE STRUCTURE IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1986, 29 (09): : 33 - 38
- [25] Frequency Detectors Based on Quartz Resonators in Analytical Devices Measurement Techniques, 2004, 47 : 697 - 705
- [26] PHOTOMAGNETIC EFFECT SPECTRUM OF MULTILAYER STRUCTURES WITH P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 226 - 230
- [27] MICROPLASMAS IN SILICON P-N JUNCTIONS AS DETECTORS FOR GAMMA RADIATION REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (04): : 390 - &
- [30] Terahertz Direct Detectors Based on Superconducting Hot Electron Bolometers with Microwave Injection 2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,