NOTE ON IONICITY OF LAYERED COMPOUNDS GAS, GASE AND INSE

被引：3
|
作者：
NAKANISHI, A
MATSUBARA, T
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 05期
关键词：
D O I：
10.1143/JPSJ.51.1339
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1339 / 1340
页数：2
相关论文
共 50 条
  • [41] GROWTH OF GAS, GASE, GATE, INSE MONOCRYSTALS IN THE GAS-PHASE AND MECHANISM OF THEIR TRANSFER
    GULIEV, TN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 1993, 36 (02): : 24 - 28
  • [42] Epitaxy of layered compounds: GaSe on Si(111)
    Jedrecy, N
    Pinchaux, R
    Eddrief, M
    PHYSICAL REVIEW B, 1997, 56 (15): : 9583 - 9588
  • [43] ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .1. BAND-STRUCTURE
    DONI, E
    GIRLANDA, R
    GRASSO, V
    BALZAROTTI, A
    PIACENTINI, M
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01): : 154 - 180
  • [44] Thermal conductivity of GaS and GaSe layered semiconductors
    Abdullaev, NA
    Aldzhanov, MA
    Kerimova, ÉM
    PHYSICS OF THE SOLID STATE, 2002, 44 (02) : 221 - 222
  • [45] AES, LEELS AND XPS STUDIES ON THE INTERFACE FORMATION BETWEEN LAYERED SEMICONDUCTORS GASE AND INSE
    NAKAYAMA, N
    KURAMACHI, T
    TANBO, T
    UEBA, H
    TATSUYAMA, C
    SURFACE SCIENCE, 1991, 244 (1-2) : 58 - 66
  • [46] Topological Phase Transition in Layered GaS and GaSe
    Zhu, Zhiyong
    Cheng, Yingchun
    Schwingenschloegl, Udo
    PHYSICAL REVIEW LETTERS, 2012, 108 (26)
  • [47] Thermal conductivity of GaS and GaSe layered semiconductors
    N. A. Abdullaev
    M. A. Aldzhanov
    É. M. Kerimova
    Physics of the Solid State, 2002, 44 : 221 - 222
  • [48] Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach
    Camara, MOD
    Mauger, A
    Devos, I
    PHYSICAL REVIEW B, 2002, 65 (12): : 1 - 12
  • [49] Intraband spectroscopy of GaSe nanoparticles and InSe/GaSe nanoparticle heterojunctions
    Kelley, David F.
    Tu, Haohua
    Chen, Xiang-Bai
    ULTRAFAST PHENOMENA XV, 2007, 88 : 671 - +
  • [50] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF INSE AND GASE LAYERED COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY
    EMERY, JY
    BRAHIMOSTMANE, L
    HIRLIMANN, C
    CHEVY, A
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3256 - 3259
12345