REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF INSE AND GASE LAYERED COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

EMERY, JY ^{[1
]}

BRAHIMOSTMANE, L ^{[1
]}

HIRLIMANN, C ^{[1
]}

CHEVY, A ^{[1
]}

机构：

[1] UNIV PARIS 06,CNRS,PHYS MIL CONDENSES LAB,UA 782,F-75252 PARIS 05,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.350972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the molecular beam homoepitaxial and heteroepitaxial growth of InSe and GaSe III-VI compounds semiconductors. In situ reflection high-electron energy diffraction measurements reveal that two-dimensional epitaxial growth occurs on (00.1) oriented substrates, at substrate temperatures ranging from 300 to 350-degrees-C. A scanning electron microscopy study of the films surfaces has been performed to correlate their morphology to the growth conditions.

引用

页码：3256 / 3259

页数：4

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