NOTE ON IONICITY OF LAYERED COMPOUNDS GAS, GASE AND INSE

被引：3
|
作者：
NAKANISHI, A
MATSUBARA, T
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 05期
关键词：
D O I：
10.1143/JPSJ.51.1339
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1339 / 1340
页数：2
相关论文
共 50 条
  • [21] INTERBAND PHOTOCONDUCTIVITY IN LAYER SEMICONDUCTORS GASE, INSE AND GAS
    ALEKPEROV, OZ
    GODJAEV, MO
    ZARBALIEV, MZ
    SULEIMANOV, RA
    SOLID STATE COMMUNICATIONS, 1991, 77 (01) : 65 - 67
  • [22] LONG-WAVELENGTH PHONONS AND ELASTIC-CONSTANTS IN LAYER COMPOUNDS GAS, GASE, AND INSE
    ALTSHUL, VY
    BASHENOV, VK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (01): : K5 - K8
  • [23] ANISOTROPIC X-RAY ABSORPTION IN LAYERED COMPOUNDS GAS AND GASE
    PIACENTINI, M
    ANTONANGELI, F
    BALZAROTTI, A
    INCOCCIA, L
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 320 - 320
  • [24] Ab initio calculations of optical constants of GaSe and InSe layered crystals
    Sarkisov, S. Yu.
    Kosobutsky, A. V.
    Brudnyi, V. N.
    Zhuravlev, Yu. N.
    PHYSICS OF THE SOLID STATE, 2015, 57 (09) : 1735 - 1740
  • [25] The Nuclear Quadrupole Resonance and Sensory Properties of GaSe and InSe Layered Semiconductors
    Samila, A. P.
    Khandozhko, V. O.
    Kovalyuk, Z. D.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (03)
  • [26] OPTICAL AND ELECTRICAL PROPERTIES OF InSe AND GaSe LAYERED CRYSTALS INTERCALATED WITH ETHANOL
    Boledzyuk, V. B.
    Kovalyuk, Z. D.
    Pyrlya, M. M.
    Barbutsa, S. G.
    UKRAINIAN JOURNAL OF PHYSICS, 2013, 58 (09): : 857 - 862
  • [27] Ab initio calculations of optical constants of GaSe and InSe layered crystals
    S. Yu. Sarkisov
    A. V. Kosobutsky
    V. N. Brudnyi
    Yu. N. Zhuravlev
    Physics of the Solid State, 2015, 57 : 1735 - 1740
  • [28] Electrical and Dielectric Features of Layered GaSe and InSe Nanocrystals Intercalated with Hydrogen
    Kovalyuk, Z. D.
    Kaminskii, V. M.
    Netyaga, V. V.
    Boledzyuk, V. B.
    Raranskyy, M. D.
    Balazyuk, V. N.
    Shevchyk, V. V.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2012, 34 (08): : 1057 - 1065
  • [29] ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .2. PHOTOEMISSION
    ANTONANGELI, F
    PIACENTINI, M
    BALZAROTTI, A
    GRASSO, V
    GIRLANDA, R
    DONI, E
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01): : 181 - 197
  • [30] Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
    Brudnyi, V. N.
    Sarkisov, S. Yu
    Kosobutsky, A. V.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (11)
12345