ACTIVATED MAGNETOCONDUCTIVITY IN THE REGION OF FRACTIONAL QUANTIZATION OF THE HALL RESISTANCE IN A SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURE

被引：0

作者：

KUKUSHKIN, IV ^{[1
]}

TIMOFEEV, VB ^{[1
]}

CHEREMNYKH, PA ^{[1
]}

机构：

[1] IV KURCHATOV ATOM ENERGY INST,MOSCOW,USSR

来源：

JETP LETTERS | 1985年 / 41卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：321 / 324

页数：4

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