ELECTRON SUBBAND STRUCTURE OF HGCDTE METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURES

被引：1
|
作者：
CHU, JH
SIZMANN, R
LIU, R
NACHEV, I
KOCH, F
机构：
[1] TECH UNIV MUNICH,DEPT PHYS,W-8046 GARCHING,GERMANY
[2] INST MICROELECTR,BU-1784 SOFIA,BULGARIA
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期
关键词：
D O I：
10.1016/0038-1101(94)90370-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The doping and pressure dependence of the surface layer capacitance has been investigated in this work for Hg0.8 Cd0.2 Te with doping concentration N(A) from 3.6 x 10(16) to 1.1 x 10(18) cm-3 and under hydrostatic pressure up to 7.3 kbar at temperature 4.2 K. By using a capacitance-voltage spectroscopy (C-V) fitting model, the subband structures such as the first subband energy E0 as a function of the energy gap E(g) and the variation of E0 with doping have been determined. The second onset of the inversion in capacitance spectroscopy on HgCdTe MIS structure has been observed. By using an expanded C-V fitting model several quantum parameters relating to the second subband of inversion layer electron can be determined quantitatively.
引用
收藏
页码：1125 / 1128
页数：4
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