Characterisation of SiNx-HgCdTe Interface in Metal-Insulator-Semiconductor Structure

被引：0
|
作者：
Zhang, J. [1 ]
Umana-Membreno, G. A. [1 ]
Gu, R. [1 ]
Lei, W. [1 ]
Antoszewski, J. [1 ]
Dell, J. M. [1 ]
Faraone, L. [1 ]
机构：
[1] Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia
来源：
2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014) | 2014年
关键词：
mercury compounds; hydrogenated silicon nitride; surface passivation; interface states; SILICON-NITRIDE; PASSIVATION; SURFACE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report results of a study of SiNx films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiNx films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80 degrees C-100 degrees C). The capacitance-voltage characteristics of SiNx/n-Hg0.68Cd0.32Te metal-insulator-semiconductor structures indicated that Si-rich SiNx films deposited at 100 degrees C can be employed as electrical passivation layers.
引用
收藏
页码：64 / 66
页数：3
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