user

INTERFACE PROPERTIES OF HGCDTE METAL-INSULATOR-SEMICONDUCTOR CAPACITORS

被引：30
|
作者：
YANG, MJ
YANG, CH
KINCH, MA
BECK, JD
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期
关键词：
D O I：
10.1063/1.100985
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：265 / 267
页数：3
相关论文
共 50 条
  • [1] Characterisation of SiNx-HgCdTe Interface in Metal-Insulator-Semiconductor Structure
    Zhang, J.
    Umana-Membreno, G. A.
    Gu, R.
    Lei, W.
    Antoszewski, J.
    Dell, J. M.
    Faraone, L.
    [J]. 2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014), 2014, : 64 - 66
  • [2] INTERFACIAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ON GAAS(110)
    HUANG, LJ
    RAJESH, K
    LAU, WM
    INGREY, S
    LANDHEER, D
    NOEL, JP
    LU, ZH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 792 - 796
  • [3] METAL-INSULATOR-SEMICONDUCTOR CAPACITORS WITH BISMUTH OXIDE AS INSULATOR
    RAJU, TA
    TALWAI, AS
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4877 - 4878
  • [4] Electrical Properties of Metal-Insulator-Semiconductor Capacitors on Freestanding GaN Substrate
    Kim, Eunhee
    Soejima, Narumasa
    Watanabe, Yukihiko
    Ishiko, Masayasu
    Kachi, Tetsu
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [5] GAAS METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AND HIGH TRANSCONDUCTANCE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    REED, J
    FAN, Z
    GAO, GB
    BOTCHKAREV, A
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (20) : 2706 - 2708
  • [6] Accurate evaluation of Ge metal-insulator-semiconductor interface properties
    Taoka, Noriyuki
    Ikeda, Keiji
    Mizubayashi, Wataru
    Morita, Yukinori
    Migita, Shinji
    Ota, Hiroyuki
    Takagi, Shinichi
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [7] HYSTERESIS AND GOLD IN METAL-INSULATOR-SEMICONDUCTOR (MIS) CAPACITORS
    BROTHERTON, SD
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (02) : 187 - +
  • [8] Metal-insulator-semiconductor capacitors on cleaved GaAs(110)
    [J]. 1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [9] METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ON CLEAVED GAAS(110)
    HUANG, LJ
    LAU, WM
    INGREY, S
    LANDHEER, D
    NOEL, JP
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8192 - 8194
  • [10] Components of channel capacitance in metal-insulator-semiconductor capacitors
    Grede, Alex J.
    Rommel, Sean L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (11)
12345