ACTIVATED MAGNETOCONDUCTIVITY IN THE REGION OF FRACTIONAL QUANTIZATION OF THE HALL RESISTANCE IN A SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURE

被引：0
|
作者：
KUKUSHKIN, IV [1 ]
TIMOFEEV, VB [1 ]
CHEREMNYKH, PA [1 ]
机构：
[1] IV KURCHATOV ATOM ENERGY INST,MOSCOW,USSR
来源：
JETP LETTERS | 1985年 / 41卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：321 / 324
页数：4
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