GROWTH OF (GAAS)1-X(SI2)X METASTABLE ALLOYS USING MIGRATION-ENHANCED EPITAXY

被引：8
|
作者：
RAO, TS
HORIKOSHI, Y
机构：
[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90763-U
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
(GaAs)1-x(Si2)x for 0 < x < 0.25 has been successfully grown on GaAs (100) substrates using migration-enhanced epitaxy. Structural and compositional analysis of the as-grown (GaAs)1-x(Si2)x layers indicated single phase epitaxial crystals with zincblende structure in the compositional range 0 < x < 0.25. The lattice constant a0 of the alloys was found to decrease with increasing Si content from 0.56543 nm at x = 0 to 0.5601 nm at x = 0.25. Double-crystal X-ray diffraction rocking curve measurements and cross-sectional transmission electron microscopy studies carried out on a 10 period (GaAs)1-x(Si2)x/GaAs strained layer superlattice indicated sharp and abrupt interfaces of high crystalline quality.
引用
收藏
页码：328 / 332
页数：5
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