GROWTH OF (GAAS)1-X(SI2)X METASTABLE ALLOYS USING MIGRATION-ENHANCED EPITAXY

被引：8
|
作者：
RAO, TS
HORIKOSHI, Y
机构：
[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90763-U
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
(GaAs)1-x(Si2)x for 0 < x < 0.25 has been successfully grown on GaAs (100) substrates using migration-enhanced epitaxy. Structural and compositional analysis of the as-grown (GaAs)1-x(Si2)x layers indicated single phase epitaxial crystals with zincblende structure in the compositional range 0 < x < 0.25. The lattice constant a0 of the alloys was found to decrease with increasing Si content from 0.56543 nm at x = 0 to 0.5601 nm at x = 0.25. Double-crystal X-ray diffraction rocking curve measurements and cross-sectional transmission electron microscopy studies carried out on a 10 period (GaAs)1-x(Si2)x/GaAs strained layer superlattice indicated sharp and abrupt interfaces of high crystalline quality.
引用
收藏
页码：328 / 332
页数：5
相关论文
共 50 条
  • [31] GROWTH OF GaAs ON PREFERENTIALLY ETCHED GaAs SURFACES BY MIGRATION-ENHANCED EPITAXY.
    Kawashima, Minoru
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (04): : 483 - 486
  • [32] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY
    STOLZ, W
    HORIKOSHI, Y
    NAGANUMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1140 - L1143
  • [33] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY
    STOLZ, W
    HORIKOSHI, Y
    NAGANUMA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C379 - C379
  • [34] Spectral sensitivity of (Si2)1-x (CdS)x solid solutions
    Saidov, A. S.
    Usmonov, Sh. N.
    Kholikov, K. T.
    Saparov, D.
    TECHNICAL PHYSICS LETTERS, 2007, 33 (10) : 853 - 855
  • [35] Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy
    Hong, YG
    Tu, CW
    JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) : 29 - 34
  • [36] Growth mechanism of GaAs microdisk structures by area-selective epitaxy using migration-enhanced epitaxy
    Iwai, Takayuki
    Toda, Takeshi
    Uehara, Takahiro
    Yoshiba, Ippei
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1600, 46 (02): : 514 - 517
  • [37] Optical investigation on the growth process of GaAs during migration-enhanced epitaxy
    Kobayashi, Naoki, 1600, (28):
  • [38] Growth mechanism of GaAs microdisk structures by area-selective epitaxy using migration-enhanced epitaxy
    Iwai, Takayuki
    Toda, Takeshi
    Uehara, Takahiro
    Yoshiba, Ippei
    Horikoshi, Yoshiji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02): : 514 - 517
  • [39] Growth and photoelectric properties of graded-gap Si-(Si2)1-x (GaP)x heterostructures
    Sapaev, B
    Saidov, AS
    Dadamukhamedov, S
    TECHNICAL PHYSICS, 2004, 49 (09) : 1243 - 1246
  • [40] MOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXY GROWTH MODES OF GAAS ON PSEUDOMORPHIC SI FILMS GROWN ON GAAS(100) SUBSTRATES
    LOPEZ, M
    YAMAUCHI, Y
    KAWAI, T
    TAKANO, Y
    PAK, K
    YONEZU, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2157 - 2162
12345