Selective growth of GaAs on GaAs (111)B substrates by migration-enhanced epitaxy

被引：0
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作者：
Suzuki, Keita [1 ,2 ]
Ito, Masahiro [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] School of Science and Engineering, Wasecla University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
[2] Kagaini Memorial Laboratory for Materials Science Ami Technology, Wasetla University, 2-8-26 Nisliiwasecla, Shinjuku-ku, Tokyo 169-0072, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 11期
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页码：6197 / 6201
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