GROWTH-MECHANISM IN MIGRATION-ENHANCED EPITAXY OF ALAS ON MISORIENTED GAAS(111)B SUBSTRATES

被引：1
|
作者：
TAKANO, Y
TORIHATA, T
KAWAI, T
PAK, K
YONEZU, H
机构：
[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期
关键词：
Alas; Excess As adsorption; Growth mechanism; Migration-enhanced epitaxy; Misoriented GaAs(111)B substrate; Reflection high-energy electron diffraction;
D O I：
10.1143/JJAP.29.L1346
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reflection high-energy electron diffraction (specular beam intensity) in migration-enhanced epitaxy of AlAs and GaAs has been investigated. The step flow growth mode was realized in the migration-enhanced epitaxy of AlAs by using a 0.5° misoriented GaAs(111)B substrate. In AlAs growth, excess As adsorption occurred easily in comparison with that in GaAs MEE growth. The control of the number of As4molecules per cycle was found to be important in obtaining a flat surface. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L1346 / L1349
页数：4
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