ELECTRONIC EXCITATIONS PRODUCED BY DEEP-LEVEL PROMOTION DURING ATOMIC-COLLISIONS IN SOLIDS

被引:24
|
作者
SROUBEK, Z [1 ]
FINE, J [1 ]
机构
[1] NATL INST STAND & TECHNOL, DIV SURFACE & MICROANAL SCI, GAITHERSBURG, MD 20899 USA
关键词
D O I
10.1103/PhysRevB.51.5635
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Expressions have been derived for electron-energy distributions of electrons excited in solids by one-electron core-level promotion processes during low-energy ion bombardment. Excitation occurs either due to the well-known autoionization of a promoted level or due to the excitation of electrons from occupied conduction-band states by a process indirectly mediated by core-level promotion. These expressions have been applied to evaluate electron-energy spectra of bombarded Al metal. As an example, two Al atoms in Al metal that collide with a kinetic energy of 1000 eV give rise to a one-electron energy spectrum which extends beyond the 2p Auger peak energy (54 eV) and which can be described approximately by an exponential dependence exp(-/10). © 1995 The American Physical Society.
引用
收藏
页码:5635 / 5643
页数:9
相关论文
共 50 条
  • [21] IONIZATION CROSS-SECTIONS DURING SLOW ATOMIC-COLLISIONS
    KOMAROV, FF
    KUMAKHOV, MA
    [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1976, 46 (09): : 1918 - 1923
  • [22] THE APPLICATION OF THE LINEARIZED BOLTZMANN TRANSPORT-EQUATION TO LOW-ENERGY ATOMIC-COLLISIONS IN SOLIDS
    JANSSEN, D
    JOLIE, J
    BORNER, HG
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1992, 88 (01): : 63 - 70
  • [23] 14TH INTERNATIONAL-CONFERENCE ON ATOMIC-COLLISIONS IN SOLIDS (ICACIS-14)
    不详
    [J]. PTB-MITTEILUNGEN, 1991, 101 (05): : 359 - 359
  • [24] IMPACT PARAMETER DEPENDENCE OF THE ELECTRONIC STOPPING IN PROTON SOLID-STATE ATOMIC-COLLISIONS
    NAGY, I
    LASZLO, J
    GIBER, J
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6): : 8 - 10
  • [25] ULTRAVIOLET-RADIATION PRODUCED IN NEAR-THRESHOLD AR+AR ATOMIC-COLLISIONS
    ROTHWELL, HL
    AMME, RC
    VANZYL, B
    [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (14) : 785 - 788
  • [27] STUDY OF LOW ENERGETIC ATOMIC-COLLISIONS IN SOLIDS USING HIGH-RESOLUTION (N, GAMMA) SPECTROSCOPY
    JOLIE, J
    ULBIG, S
    BORNER, HG
    LIEB, KP
    ROBINSON, SJ
    SCHILLEBEECKX, P
    KESSLER, EG
    DEWEY, MS
    GREENE, GL
    [J]. EUROPHYSICS LETTERS, 1989, 10 (03): : 231 - 236
  • [28] MODEL CLUSTERS AND ELECTRONIC CHARACTERISTICS OF DEEP-LEVEL IMPURITIES IN SILICON
    RUSSO, N
    TOSCANO, M
    BARONE, V
    MINICHINO, C
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 145 (02): : K125 - K130
  • [29] IDENTIFICATION OF DEEP-LEVEL STATES IN ELECTRONIC MATERIALS BY OPTICALLY STIMULATED DEEP LEVEL IMPEDANCE SPECTROSCOPY
    JANSEN, AN
    ORAZEM, ME
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (05) : 1463 - 1469
  • [30] ELECTRONIC-STRUCTURE OF SIMPLE DEEP-LEVEL DEFECTS IN SEMICONDUCTORS
    SCHEFFLER, M
    [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1982, 22 : 115 - 148