MODEL CLUSTERS AND ELECTRONIC CHARACTERISTICS OF DEEP-LEVEL IMPURITIES IN SILICON

被引：0
|
作者：
RUSSO, N [1 ]
TOSCANO, M [1 ]
BARONE, V [1 ]
MINICHINO, C [1 ]
机构：
[1] UNIV NAPLES,I-80134 NAPLES,ITALY
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 145卷 / 02期
关键词：
D O I：
10.1002/pssb.2221450251
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：K125 / K130
页数：6
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