A SIMPLE WAFER-LEVEL MEASUREMENT TECHNIQUE FOR PREDICTING OXIDE RELIABILITY

被引：11
|
作者：
NARIANI, SR
GABRIEL, CT
机构：
[1] VLSI Technology Inc., San Jose
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期
关键词：
D O I：
10.1109/55.790722
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new wafer-level measurement technique, the differential gate antenna analysis, has been developed to detect weaknesses in sub-micrometer oxide, This simple technique involves the use of dual antenna structures with different gate oxide areas but the same antenna area ratio, The critical parameter is the difference in their failure levels. It is shown that such a differential measurement of antenna failures-correlates with product failure during accelerated life testing, The differential antenna structures are thus proven useful for real-time wafer. level monitoring of oxide reliability.
引用
收藏
页码：242 / 244
页数：3
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