共 50 条
- [42] PHOTOLUMINESCENCE DUE TO LATTICE-MISMATCH DEFECTS IN HIGH-PURITY ZNSE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03): : L441 - L443
- [43] LOW-PRESSURE VAPOR-PHASE EPITAXY OF HIGH-PURITY ZNSE USING METALLIC ZINC AND SELENIUM AS SOURCE MATERIALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (03): : L209 - L211
- [44] LIQUID-PHASE EPITAXY GROWTH OF HIGH-PURITY INP USING RARE-EARTH DYSPROSIUM GETTERING MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (04): : 389 - 392
- [45] HIGH-PURITY LIQUID-PHASE EPITAXIAL-GROWTH OF INP JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (11A): : 4878 - 4884
- [50] NEAR-BAND-EDGE PHOTOLUMINESCENCE OF HIGH-PURITY GAXIN1-XP GROWN BY CHLORIDE VAPOR-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07): : L551 - L553