HIGH-PURITY LIQUID-PHASE EPITAXIAL-GROWTH OF INP

This paper reports a study of indium solvent baking in wet hydrogen and solution recyclic usage techniques for high purity InP liquid phase epitaxial growth (LPE). Obtained purity, as indicated by RT mobility of 6460 cm2/Vs, is the highest ever reported. However at 77 K, the carrier concentration range was only 3-4 x 10(14) CM-3 and electron mobility was approximately 112200 cm2/Vs during a series of recyclic growth. The limit to the purity obtainable by LPE appears to be mainly due to an enhanced contamination process native to materials containing phosphor, and perhaps partially due to difficulty in keeping the solution saturation stable during the recyclic growth series.