INCIDENCE ANGLE DEPENDENCE OF PLANAR CHANNELING IN BORON ION-IMPLANTATION INTO SILICON

被引：13
|
作者：
MIYAKE, M
YOSHIZAWA, M
HARADA, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
关键词：
D O I：
10.1149/1.2119789
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：716 / 719
页数：4
相关论文
共 50 条
  • [21] EFFECTS OF A STRESS-FIELD ON BORON ION-IMPLANTATION DAMAGE IN SILICON
    MIS, JD
    MADER, SR
    BESHERS, DN
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2294 - 2299
  • [22] BORON ION-IMPLANTATION IN SILICON THROUGH SELECTIVELY DEPOSITED TUNGSTEN FILMS
    DELFINO, M
    DEBLASI, JM
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 338 - 340
  • [23] SPATIAL-DISTRIBUTION OF DEFECTS PRODUCED BY BORON ION-IMPLANTATION OF SILICON
    YUDIN, VV
    KURINNY, VI
    AKIMOV, YS
    KARATSYUBA, AP
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (01): : 59 - 61
  • [24] ION-IMPLANTATION OF POROUS SILICON
    PENG, C
    FAUCHET, PM
    REHM, JM
    MCLENDON, GL
    SEIFERTH, F
    KURINEC, SK
    APPLIED PHYSICS LETTERS, 1994, 64 (10) : 1259 - 1261
  • [25] AMORPHIZATION OF SILICON BY ION-IMPLANTATION
    DENNIS, JR
    HALE, EB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 408 - 408
  • [26] MOLECULAR ION-IMPLANTATION INTO SILICON
    MUKASHEV, BN
    SMIRNOV, VV
    KALBITZER, S
    WEISER, M
    BORRET, R
    BEHAR, M
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 114 (1-2): : 3 - 14
  • [27] ION-IMPLANTATION IN SILICON WAFERS
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1978, 21 (11) : 47 - 47
  • [28] MEGAVOLT ION-IMPLANTATION INTO SILICON
    BYRNE, PF
    CHEUNG, NW
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 463 : 15 - 18
  • [29] ION-IMPLANTATION OF BORON IN GAAS DEVICES
    MCNALLY, PJ
    COMSAT TECHNICAL REVIEW, 1983, 13 (02): : 437 - 450
  • [30] PRECISE ION-IMPLANTATION ANALYSIS INCLUDING CHANNELING EFFECTS
    TAKEDA, T
    TAZAWA, S
    YOSHII, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1278 - 1285
12345