FOCUSED ION-BEAM MILLING

被引：23

作者：

WATKINS, REJ ^{[2
]}

ROCKETT, P

THOMS, S

CLAMPITT, R

SYMS, R

机构：

[1] UNIV OXFORD,RUTHERFORD APPLETON LAB,OXFORD,ENGLAND

[2] UNIV OXFORD,DEPT ENGN SCI,OXFORD,ENGLAND

[3] OXFORD APPL RES,WITNEY,OXON,ENGLAND

来源：

VACUUM | 1986年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(86)90148-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：961 / 967

页数：7

共 50 条

[21] TWO-DIMENSIONAL PROFILE SIMULATION OF FOCUSED ION-BEAM MILLING OF LSI
ITOH, F
SHIMASE, A
HARAICHI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C374 - C375
[22] Influence of astigmatism on the fabrication of diffractive structures by use of focused ion-beam milling
Fu, YQ
Bryan, NKA
[J]. OPTICS EXPRESS, 2004, 12 (17): : 3954 - 3966
[23] Ion damage during preparation of nanostructures in magnetite by means of focused ion-beam (FIB) milling
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Koblischka, M. R.
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2008, 44 (4-5) : 468 - 475
[24] FOCUSED ION-BEAM TECHNOLOGY AND APPLICATIONS
MELNGAILIS, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 469 - 495
[25] DEVELOPMENT OF FOCUSED ION-BEAM SYSTEMS
AIHARA, R
SAWARAGI, H
THOMPSON, W
SHEARER, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C375 - C375
[26] FOCUSED ION-BEAM INDUCED DEPOSITION
MELNGAILIS, J
BLAUNER, PG
[J]. ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 127 - 141
[27] MICROMACHINING USING A FOCUSED ION-BEAM
YOUNG, RJ
[J]. VACUUM, 1993, 44 (3-4) : 353 - 356
[28] FOCUSED ION-BEAM LITHOGRAPHY AND IMPLANTATION
MELNGAILIS, J
[J]. EIGHTH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM, 1989, : 70 - 75
[29] FOCUSED ION-BEAM TECHNOLOGY FOR OPTOELECTRONICS
GAMO, K
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 307 - 314
[30] Depth control of focused ion-beam milling from a numerical model of the sputter process
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Xie, JS
Nassar, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3085 - 3090

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