GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR CIRCUITS FABRICATED ON GAAS-ON-SI SUBSTRATES

被引：0
|
作者：
TRAN, LT [1 ]
MATYI, RJ [1 ]
SHICHIJO, H [1 ]
YUAN, HT [1 ]
LEE, JW [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期
关键词：
D O I：
10.1109/T-ED.1987.23279
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2369 / 2370
页数：2
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