Life testing of GaAs AlGaAs heterojunction bipolar transistors

被引：0

作者：

Mittereder, JA ^{[1
]}

Roussos, JA ^{[1
]}

Anderson, WT ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

1998 GAAS RELIABILITY WORKSHOP, PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/GAASRW.1998.768034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：40 / 45

页数：6

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