Life testing of GaAs AlGaAs heterojunction bipolar transistors

被引：0
|
作者：
Mittereder, JA [1 ]
Roussos, JA [1 ]
Anderson, WT [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
1998 GAAS RELIABILITY WORKSHOP, PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/GAASRW.1998.768034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：40 / 45
页数：6
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