GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR CIRCUITS FABRICATED ON GAAS-ON-SI SUBSTRATES

被引：0

作者：

TRAN, LT ^{[1
]}

MATYI, RJ ^{[1
]}

SHICHIJO, H ^{[1
]}

YUAN, HT ^{[1
]}

LEE, JW ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2369 / 2370

页数：2

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