SELECTIVE INSENSITIVITY OF A P-N JUNCTION IN DEEP-LYING ZINC LEVELS IN SILICON

被引：0
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作者：
KORNILOV, BN
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来源：
SOVIET PHYSICS-SOLID STATE | 1964年 / 5卷 / 11期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：2441 / 2442
页数：2
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