SELECTIVE INSENSITIVITY OF A P-N JUNCTION IN DEEP-LYING ZINC LEVELS IN SILICON

被引：0
|
作者：
KORNILOV, BN
机构：
来源：
SOVIET PHYSICS-SOLID STATE | 1964年 / 5卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：2441 / 2442
页数：2
相关论文
共 50 条
  • [21] SILICON P-N JUNCTION RADIATION DETECTORS FOR TELSTAR
    BUCK, TM
    WHEATLEY, GH
    RODGERS, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : C55 - C55
  • [22] VISIBLE LIGHT FROM A SILICON P-N JUNCTION
    NEWMAN, R
    PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703
  • [23] Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels
    Buniatyan, VV
    Gasparyan, FV
    Aroutiounian, VV
    Soukiassian, P
    APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 466 - 470
  • [24] Determination of the parameters of deep levels from the relaxational delay of breakdown of a p-n junction
    Bulyarskii, SV
    Serëzhkin, YN
    Ionychev, VK
    SEMICONDUCTORS, 1999, 33 (04) : 473 - 476
  • [25] Determination of the parameters of deep levels from the relaxational delay of breakdown of a p-n junction
    S. V. Bulyarskii
    Yu. N. Serëzhkin
    V. K. Ionychev
    Semiconductors, 1999, 33 : 473 - 476
  • [26] PROPERTIES OF DEEP-LYING LEVELS IN A STRONG ELECTROSTATIC-FIELD
    POPOV, VS
    YELETSKY, VL
    MUR, VD
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1976, 71 (09): : 856 - 870
  • [27] SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS
    MADDEN, TC
    GIBSON, WM
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01): : 50 - +
  • [28] Negative magnetoresistance of heavily doped silicon p-n junction
    Borblik, V. L.
    Rudnev, I. A.
    Shwarts, Yu. M.
    Shwarts, M. M.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2011, 14 (01) : 88 - 90
  • [29] AN INSTRUMENT FOR INDICATING POSITION OF P-N JUNCTION IN SILICON RECTIFIERS
    DORIN, VA
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (06): : 1504 - &
  • [30] Silicon nanowire radial p-n junction solar cells
    Garnett, Erik C.
    Yang, Peidong
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (29) : 9224 - +
12345