EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON

被引：0
|
作者：
VERBITSKAYA, EM
EREMIN, VE
IVANOV, AM
STROKAN, NB
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 07期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Radiation defects formed by deuterons in radiation detectors made of high-resistivity n-type Si have been studied. The effects of deuteron and alpha-particle irradiation were compared. The results indicate that annealing can reduce the reverse current in the irradiated detectors. The observed effects were explained by the presence of large multicomponent complexes.
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页码：612 / 616
页数：5
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