共 50 条
- [1] PREPARATION OF SURFACE-BARRIER DETECTORS FROM HIGH-RESISTIVITY P-TYPE SILICON [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1118 - +
- [2] REVERSE CURRENT OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER COUNTERS [J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 44 (01): : 55 - &
- [3] A NOTE ON NON-INJECTING BACK CONTACTS FOR HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 226 (2-3): : 564 - 565
- [4] PREPARATION OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS FOR USE AT LARGE REVERSE BIAS VOLTAGES [J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 26 (02): : 205 - 208
- [5] RESISTIVITY ESTIMATION OF IRRADIATED SILICON SURFACE-BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 348 (2-3): : 479 - 484
- [6] VOLTAGE-DEPENDENT REVERSE CURRENT IN HIGH-RESISTIVITY SILICON SURFACE-BARRIER DIODES [J]. NUCLEAR INSTRUMENTS & METHODS, 1974, 114 (02): : 241 - 244
- [8] SILICON SURFACE-BARRIER DETECTORS IN EPOXY [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (03): : 558 - +
- [9] DEVELOPMENT OF HIGH-RESOLUTION SILICON SURFACE-BARRIER DETECTORS [J]. PRAMANA, 1988, 31 (03) : 185 - 195
- [10] FABRICATION OF DETECTORS AND TRANSISTORS ON HIGH-RESISTIVITY SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 275 (03): : 537 - 541